TY - JOUR AU - Kyaw, Wut Hmone AU - Aye, May Nwe Myint PY - 2020/06/21 Y2 - 2024/03/29 TI - Simulation of Energy Bands for Metal and Semiconductor Junction JF - Journal La Multiapp JA - JLMA VL - 1 IS - 2 SE - Articles DO - 10.37899/journallamultiapp.v1i2.107 UR - https://newinera.com/index.php/JournalLaMultiapp/article/view/107 SP - 7-13 AB - This paper presents the metal-semiconductor band structure analysis for metal-oxide semiconductor field effect transistor (MOSFET). The energy bands were observed at metal-semiconductor and semiconductor-metal junctions. The simulation results show energy variations by using gallium-nitride (GaN) material. Gallium nitride based MOSFETs have some special material properties and wide band-gap. From the energy band, the condition of contact potential, conduction and valence band-edges can be analyzed. The computerized simulation results for getting the band layers are investigated with MATLAB programming language. ER -